Temperature stabilized 1.55 mm photoluminescence in InAs quantum dots grown on InAlGaAsÕInP

We report on temperature stabilized photoluminescence centered around 1.55 mm in InAs quantum dots grown by molecular beam epitaxy on InP substrate using InAlGaAs as the matrix layer. The photoluminescence emission peak wavelength of quantum dot samples with 5.5 monolayers of InAs deposition has a near zero shift between 300 and 77 K measurements. Decreasing the deposited InAs layer thickness or introducing a GaAs strain-balance layer leads to a regular redshift in the photoluminescence emission with increasing temperature. On the contrary, a blueshift is observed on samples with a thicker InAs layer thickness. These phenomena indicate the strain around quantum dots plays an important role in deciding the temperature-dependent properties of the quantum dot samples. This interesting temperature stabilization of photoluminescence in the quantum dot samples offers great potential for optical communication laser applications. © 2004 American Vacuum Society. @DOI: 10.1116/1.1688358#